中文信息-欧洲杯投注官网

代表性论文：

1. yi, h.; zhao, j.; huang, y.; zhu, g.; mei, y.; li, z.; li, l.*, formation of graphene–silicon junction by room temperature reduction with simultaneous defects removal. ieee trans. electron devices. 2021,68 (2), 873-878.

2.  li, l.; tuan, c.-c.; zhang, c.; chen, y.; lian, g.; wong, c. p. uniform metal-assisted chemical etching for ultra-high-aspect-ratio microstructures on silicon. ieee j. microelectromech. syst. 2019, 28, 143.

3. li, l.; zhang, c.; tuan, c.-c.; chen, y.; wong, c. p. high-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching. j. micromech. microeng. 2018, 28, 055006.

4. li, l.; li, b.; zhang, c.; tuan, c.-c.; lin, z.; wong, c.-p. a facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. j. mater. chem. c 2016,4, pp 8953.

5. li, l.; song, b.; maurer, l.; lin, z.; lian, g.; tuan, c.-c.; moon, k.-s.; wong, c.-p. molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. nano energy 2016, 21, pp 276.

6. li, l..; zhang, g.; wong, c. p. formation of through silicon vias in wafer level by metal-assisted chemical etching for silicon interposer. ieee transactions on components, packaging and manufacturing technology 2015, 5, pp 1039.

7. li, l.; zhao, x.; wong, c. p. charge transport in uniform metal-assisted chemical etching (umace) for 3d high-aspect ratio micro- and nanofabrication on silicon. ecs. j. solid state sci. technol. 2015, 4, pp 337.

8. li, l.; zhao, x.; wong, c.-p. deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity and 3d complexity by electric bias-attenuated metal-assisted chemical etching (emace). acs appl. mater. interfaces 2014, 6, pp 16782.

9. li, l.; liu, y.; zhao, x.; lin, z.; wong, c.-p. uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts. acs appl. mater. interfaces 2014,6, pp 575.

授权专利：

1. li, l.; wong, c.p., et al. “metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3d profilesus”, u.s. patent 10,134,634

发展新工艺、新材料及相应表征技术，理解材料结构-性能关系和失效机理，搭建特色加工和检测设备，包括：

-图形化工艺与材料；

-互连工艺与材料：low-k介电层，导电材料，扩散阻挡层；

-三维封装工艺与材料：硅通孔，微凸点，铜-氧化硅混合键合；

-深硅刻蚀特色工艺：微纳深孔、深槽和斜孔、弯孔加工；

-mems、微流、光学器件加工；

-失效分析：薄膜与微纳结构的力学分析，界面分析，分子结构分析。

-先进封装工艺与材料；-应用于mems、超材料等领域的微纳加工技术；-先进表征技术。

代表性论文：

1.  yi, h.; zhao, j.; huang, y.; zhu, g.; mei, y.; li, z.; li, l.*, formation of graphene–silicon junction by room temperature reduction with simultaneous defects removal. ieee trans. electron devices. 2021,68 (2), 873-878.

2. li, l.; tuan, c.-c.; zhang, c.; chen, y.; lian, g.; wong, c. p. uniform metal-assisted chemical etching for ultra-high-aspect-ratio microstructures on silicon. ieee j. microelectromech. syst. 2019, 28, 143.

3. li, l.; zhang, c.; tuan, c.-c.; chen, y.; wong, c. p. high-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching. j. micromech. microeng. 2018, 28, 055006.

4. li, l.; li, b.; zhang, c.; tuan, c.-c.; lin, z.; wong, c.-p. a facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. j. mater. chem. c 2016,4, pp 8953.

5. li, l.; song, b.; maurer, l.; lin, z.; lian, g.; tuan, c.-c.; moon, k.-s.; wong, c.-p. molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. nano energy 2016, 21, pp 276.

6. li, l..; zhang, g.; wong, c. p. formation of through silicon vias in wafer level by metal-assisted chemical etching for silicon interposer. ieee transactions on components, packaging and manufacturing technology 2015, 5, pp 1039.

7. li, l.; zhao, x.; wong, c. p. charge transport in uniform metal-assisted chemical etching (umace) for 3d high-aspect ratio micro- and nanofabrication on silicon. ecs. j. solid state sci. technol. 2015, 4, pp 337.

8. li, l.; zhao, x.; wong, c.-p. deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity and 3d complexity by electric bias-attenuated metal-assisted chemical etching (emace). acs appl. mater. interfaces 2014, 6, pp 16782.

9. li, l.; liu, y.; zhao, x.; lin, z.; wong, c.-p. uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts. acs appl. mater. interfaces 2014,6, pp 575.

授权专利：

1. li, l.; wong, c.p., et al. “metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3d profilesus”, u.s. patent 10,134,634

课题组常年招收有志于芯片制造工艺、材料研究的博士后、博士生、硕士生和访问学者。