中文信息-欧洲杯投注官网

(1) 2011-3至2015-1, 东南大学, 微电子学与固体电子学, 博士；

(2) 2008-9至2011-2, 东南大学, 微电子学与固体电子学, 硕士；

(3) 2009-1至2010-12，法国雷恩第一大学，电子科学与技术，硕士；

(4) 2004-9至2008-6, 合肥工业大学, 微电子学, 学士

(1)2023-5至今, 东南大学, 集成电路学院, 教授, 博导；

(2)2021-4至2023-4, 东南大学, 电子科学与工程学院, 教授, 博导；

(3)2017-3至2021-3, 东南大学, 电子科学与工程学院, 副研究员, 博导；

(4) 2015-8至2016-8, 美国北卡罗莱纳州立大学, 电子科学与计算工程学院，访问学者；

(5) 2015-1至2017-2, 东南大学, 博士后；

(1)承担本科生课程《电子器件可靠性理论基础及应用》（48学时)

(2) 承担研究生课程《半导体器件物理》（36学时）

功率半导体器件设计及可靠性

(1) siyang liu, xin tong, jiaxing wei, weifeng sun, “single-pulse avalanche failure investigations of si-sj-mosfet and sic-mosfet by step-control infrared thermography method”, ieee trans. on power electronics, 2020, 35(5), pp.5180-5189.

(2) siyang liu, xin tong, jiaxing wei, weifeng sun, “”, ieee trans. on industrial electronics, 2020, doi:.

(3) siyang liu, sheng li , chi zhang, ningbo li, xinyi tao, weifeng sun, “single pulse unclamped-inductive-switching induced failure and analysis for 650v p-gan hemt”, ieee trans. on power electronics, 2020, 35(11), pp.11328-11331.

(4) siyang liu, lu li, ran ye, haibo wu, wangran wu, weifeng sun, shulang ma, boyong he, wei su, “hot-carrier-induced degradation and optimization for 700v high-voltage lateral dmos by the ac stress”, ieee trans. on electron devices, 2020, 67(3), pp.1090-1097.

(5) siyang liu, hanqi yang, zhichao li, weifeng sun, “switch-off avalanche breakdown induced electrical degradations of rf-ldmos transistor for smpas applications”, ieee trans. on electron devices, 2018, 65(10), pp. 4719-4723.

(6) siyang liu, ran ye, weifeng sun, longxing shi, “a novel lateral dmos transistor with h-shape shallow-trench-isolation structure”, ieee trans. on electron devices, 2018, 65(11), pp. 5218-5221.

(7) siyang liu, chao yang, weifeng sun, qingsong qian, yu huang, xing wu, litao sun, “repetitive-avalanche-induced electrical parameters shift for 4h-sic junction barrier schottky diode”, ieee trans. on electron devices, 2017, 64(8), pp. 3275-3281.

(8) siyang liu, weifeng sun, qinsong qian, jiaxing wei, fang jiong, li ting, zhang chi, shi longxing, “a review on hot-carrier-induced degradation of lateral dmos transistor”, ieee trans. on device and materials reliability, 2018, 18(2), pp.298-312.

(9) , , , , “hot-carrier-induced degradations investigations for 600v igbt by an improved charge pumping solution”, ieee trans. on electron devices, 2017, 64(2), pp. 634-637.

(10) , , , , , , , , , “lateral dmos with partial-resist-implanted drift region for alleviating hot-carrier effect”, ieee trans. on device and materials reliability, 2017, 17(4), pp.780-784.

(11) , , , , , , , , “electrical parameters degradations and optimizations of soi-ligbt under repetitive unclamped inductive switching conditions”, ieee trans. on electron devices, 2016, 63(4), pp.1644-1649.

(12) , , , , , , “repetitive unclamped-inductive-switching-induced electrical parameters degradations and simulation optimizations for 4h-sic mosfets”,ieee trans. on electron devices, 2016, 63(11), pp.4331-4338.

(1) 2020年度国家技术发明二等奖（排2）；

(2) 2019年江苏省科学技术一等奖(排2);

(3) 2014年教育部技术发明一等奖(排4);

(4) 2016年首届电子学会优秀博士学位论文奖；

(5) 2016年江苏省优秀博士学位论文奖